VN2222LL-G-P003 数据手册
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技术规格
- Manufacturer: Microchip Technology
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- detail: N-Channel 60V 230mA (Tj) 400mW (Ta), 1W (Tc) Through Hole TO-92-3